? semiconductor components industries, llc, 2000 october, 2000 rev. 2 1 publication order number: mur10150e/d mur10150e preferred device scanswitch ? power rectifier for use as a damper diode in high and very high resolution monitors the mur10150e is a state-of-the-art power rectifier specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. ? 1500 v blocking voltage ? 20 mj avalanche energy guaranteed ? peak transient overshoot voltage specified, 14 volts (typical) ? forward recovery time specified, 135 ns (typical) ? epoxy meets ul94, v o at 1/8 mechanical characteristics ? case: epoxy, molded ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? shipped 50 units per plastic tube ? marking: u10150e maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 1500 v average rectified forward current (rated v r , t c = 125 c) i f(av) 10 a peak repetitive forward current (rated v r , square wave, 20 khz, t c = 125 c) per leg i frm 20 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 100 a operating junction and storage temperature range t j , t stg 65 to +125 c controlled avalanche energy w aval 20 mj device package shipping ordering information mur10150e to220 http://onsemi.com to220ac case 221b style 1 50 units/rail 3 4 1 scanswitch rectifier 10 amperes 1500 volts marking diagram u10150e u10150e = device code 1 3 4 preferred devices are recommended choices for future use and best overall value.
mur10150e http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance e junction to case r q jc 2.0 c/w electrical characteristics characteristic symbol typ max unit maximum instantaneous forward voltage (note 1.) (i f = 6.5 amps, t j = 125 c) (i f = 6.5 amps, t j = 25 c) v f 1.7 1.9 2.2 2.4 volts maximum instantaneous reverse current (note 1.) (rated dc voltage, t j = 125 c) (rated dc voltage, t j = 25 c) i r 750 25 1000 100 m a maximum reverse recovery time (i f = 1.0 amp, di/dt = 50 amps/ m s) t rr 150 175 ns maximum forward recovery time (i f = 6.5 amps, di/dt = 12 amps/ m s) t fr 135 175 ns peak transient overshoot voltage v rfm 14 16 volts 1. pulse test: pulse width = 300 m s, duty cycle 2.0% i f 20 10 5 2 0.5 0.2 0.1 1 v f , instantaneous voltage (volts) 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 figure 1. typical forward voltage t j = 125 c 85 c 25 c , instantaneous forward current (amps) i , reverse current ( a) r m 1000 100 10 1 0.1 0.01 0.001 0 300 600 900 1.2k 1.5k figure 2. typical reverse current v r , reverse voltage (volts) t j = 125 c 100 c 25 c 40 35 30 25 20 15 10 5 0 p , average forward power dissipation (watts) f(av) t j = 125 c 0 5 10 15 20 i f(av) , average forward current (amps) figure 3. forward power dissipation sine wave (resistive load) dc square wave
mur10150e http://onsemi.com 3 i , average forward current (amps) f(av) 8 7 6 5 4 3 2 1 85 95 0 105 115 125 t c , case temperature ( c) figure 4. current derating case (rated v r applied) r q jc = 2.0 c/w square wave dc c, capacitance (pf) 500 400 200 300 100 0.2 0.5 1 2 5 10 20 50 100 0.1 0 v r , reverse voltage (volts) figure 5. typical capacitance typical capacitance at 0 v = 430 pf 300 270 240 210 180 150 120 90 60 30 0 t , reverse recovery time (ns) rr 0 1 2 345 6 789 10 i f , forward current (amps) figure 6. typical reverse recovery time v r = 30 v di/dt = 50 a/ m s 100 a/ m s q , stored recovery charge (nc) rr 1k 900 800 700 600 500 400 300 200 100 0 v r = 30 v di/dt = 100 a/ m s = 50 a/ m s 0 1 2 34 5 6 789 10 i f , forward current (amps) figure 7. typical stored recovery charge
mur10150e http://onsemi.com 4 package dimensions to220 twolead case 221b04 issue d b r j d g l h q t u a k c s 4 13 dim min max min max millimeters inches a 0.595 0.620 15.11 15.75 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.82 d 0.025 0.035 0.64 0.89 f 0.142 0.147 3.61 3.73 g 0.190 0.210 4.83 5.33 h 0.110 0.130 2.79 3.30 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.14 1.39 t 0.235 0.255 5.97 6.48 u 0.000 0.050 0.000 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. f style 1: pin 1. cathode 2. n/a 3. anode 4. cathode on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mur10150e/d scanswitch is a trademark of semiconductor components industries, llc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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